Sotabase

Career

· Ray and Maria Stata Professor of Electrical Engineering and Computer Science (Professor Emeritus), Massachusetts Institute of Technology (MIT)1978–
· Ph.D. in Electrical Engineering, Stanford University1976–
· B.S. in Physics, National and Kapodistrian University of Athens1970–
· Professor, Microsystems Technology Laboratories
· Team Member, MIT Media Lab

Publications (1050)

Adaptive body bias for reducing impacts of die-to-die and within-die parameter variations on microprocessor frequency and leakage
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) · 2002
791
cited
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length.
Nano letters (Print) · 2016
453
cited
Scaling of stack effect and its application for leakage reduction
ISLPED'01: Proceedings of the 2001 International Symposium on Low Power Electronics and Design (IEEE Cat. No.01TH8581) · 2001
428
cited
Measurement and modeling of self-heating in SOI nMOSFET's
1994
323
cited
Transistor Sizing Issues And Tool For Multi-threshold Cmos Technology
Proceedings - Design Automation Conference · 1997
270
cited
Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
IEEE Electron Device Letters · 2008
260
cited
Conductance oscillations periodic in the density of a one-dimensional electron gas.
Physical Review Letters · 1989
258
cited
Strained silicon MOSFET technology
Digest. International Electron Devices Meeting, · 2002
250
cited
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
2001
247
cited
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters
IEEE Transactions on Electron Devices · 2009
233
cited
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
2001
217
cited
High quality Ge on Si by epitaxial necking
2000
215
cited
Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics
1982
176
cited
Relationship between measured and intrinsic transconductances of FET's
IEEE Transactions on Electron Devices · 1987
175
cited
On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?
IEEE Electron Device Letters · 2001
167
cited
Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors
2002
164
cited
Full-chip subthreshold leakage power prediction and reduction techniques for sub-0.18-/spl mu/m CMOS
IEEE Journal of Solid-State Circuits · 2004
157
cited
Models for computer simulation of complete IC fabrication process
IEEE Transactions on Electron Devices · 1979
152
cited
Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.
Nano letters (Print) · 2016
147
cited
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
IBM Journal of Research and Development · 2006
145
cited
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