Sotabase

Career

· Donner Professor of Science, Massachusetts Institute of Technology1988–
· Software Engineer, NTT LSI Laboratories1985–1988
· PhD in Electrical Engineering, Stanford University1981–1985
· Telecommunications Engineer Degree, Polytechnic University of Madrid1980–
· Researcher, Solar Energy Institute, Polytechnic University of Madrid1977–1981

Publications (424)

Nanometre-scale electronics with III-V compound semiconductors.
Nature · 2011
392
cited
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
IEEE Electron Device Letters · 2008
303
cited
30-nm InAs Pseudomorphic HEMTs on an InP Substrate With a Current-Gain Cutoff Frequency of 628 GHz
IEEE Electron Device Letters · 2008
182
cited
TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs
IEEE Electron Device Letters · 2008
165
cited
Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon
International Electron Devices Meeting · 1985
142
cited
Protonic solid-state electrochemical synapse for physical neural networks
Nature Communications · 2020
134
cited
30-nm InAs PHEMTs With $f_{T} = \hbox{644}\ \hbox{GHz}$ and $f_{\max} = \hbox{681}\ \hbox{GHz}$
IEEE Electron Device Letters · 2010
120
cited
A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
IEEE Electron Device Letters · 2008
109
cited
Forward-bias tunneling: A limitation to bipolar device scaling
IEEE Electron Device Letters · 1986
101
cited
Stability and Reliability of Lateral GaN Power Field-Effect Transistors
IEEE Transactions on Electron Devices · 2019
99
cited
fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max > 2.7 mS/µm
International Electron Devices Meeting · 2011
85
cited
A Technology Overview of the PowerChip Development Program
IEEE transactions on power electronics · 2013
84
cited
Measurement of hole mobility in heavily doped n-type silicon
IEEE Electron Device Letters · 1986
83
cited
Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon
IEEE Transactions on Electron Devices · 1987
78
cited
A through-wafer interconnect in silicon for RFICs
IEEE Transactions on Electron Devices · 2004
77
cited
Impact of electrical degradation on trapping characteristics of GaN high electron mobility transistors
2008 IEEE International Electron Devices Meeting · 2008
75
cited
Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications
IEEE Transactions on Electron Devices · 2007
69
cited
Electrochemical Ionic Synapses: Progress and Perspectives
Advances in Materials · 2022
67
cited
Lateral and Vertical Scaling of $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Post-Si-CMOS Logic Applications
IEEE Transactions on Electron Devices · 2008
66
cited
Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs
IEEE Electron Device Letters · 2014
66
cited
Sotabase
Jesus A. Del Alamo | Researcher Profile | Sotabase | Sotabase