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PhD candidate in Computer Science, HCI Group
,
Stanford University
2019–
Publications
(81)
Strain-induced two-dimensional electron gas in selectively doped Si/SixGe1-x superlattices.
Physical Review Letters · 1985
436
cited
Explanations Can Reduce Overreliance on AI Systems During Decision-Making
Proc. ACM Hum. Comput. Interact. · 2022
254
cited
The n-channel SiGe/Si modulation-doped field-effect transistor
IEEE Transactions on Electron Devices · 1986
169
cited
Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
1988
128
cited
Symmetrically strained Si/Ge superlattices on Si substrates.
Physical Review B (Condensed Matter) · 1988
109
cited
Secondary implantation of Sb into Si molecular beam epitaxy layers
1985
95
cited
Strained layer SiSiGe superlattices
1987
64
cited
Boron delta doping in Si and Si0.8Ge0.2 layers
1990
52
cited
Doping by Secondary Implantation
1986
46
cited
Forward‐bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures
1993
38
cited
GPTCoach: Towards LLM-Based Physical Activity Coaching
International Conference on Human Factors in Computing Systems · 2024
38
cited
Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures
1987
33
cited
Mobility Enhancement in Modulation‐Doped Si ‐ Si1 − x Ge x Superlattice Grown by Molecular Beam Epitaxy
1986
31
cited
Properties of Si layers grown by molecular beam epitaxy at very low temperatures
1989
30
cited
Strain measurements and thermal stability of Si_1−xGe_x/Si strained layers
1989
29
cited
Si/SiGe heterostructure MITATT diode
1988
25
cited
Pearl: A Technology Probe for Machine-Assisted Reflection on Personal Data
International Conference on Intelligent User Interfaces · 2023
24
cited
Coplanar Ka-band SiGe-MMIC amplifier
1995
22
cited
Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers
1986
21
cited
Dispersion of folded phonons in SiSixGe1−x superlattices
1986
19
cited
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