Sotabase

Career

· royal-Saurav/saurav-portfolio, GitHub - royal-Saurav/saurav-portfolio2021–
· sauravabc16.github.io, GitHub - sauravabc16/sauravabc16.github.io2020–
· SOURAV-ROY, GitHub - SOURAV-ROY/SOURAV-ROY2020–
· Director, VLSI Architecture, Synthesis, and Technology (VAST) Laboratory, University of California, Los Angeles (UCLA)

Publications (50)

High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
IEEE Electron Device Letters · 2021
88
cited
2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
Applied Physics Letters · 2023
74
cited
Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window
Applied Physics Letters · 2020
71
cited
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2
Applied Physics Express · 2022
55
cited
130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
2021
51
cited
Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels
2020
48
cited
Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs.
ACS Applied Materials and Interfaces · 2022
48
cited
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
APL Materials · 2022
45
cited
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
IEEE Electron Device Letters · 2021
43
cited
High-Mobility Tri-Gate β-Ga2O3 MESFETs With a Power Figure of Merit Over 0.9 GW/cm2
IEEE Electron Device Letters · 2022
37
cited
Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric
IEEE Journal of the Electron Devices Society · 2020
37
cited
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
Applied Physics Letters · 2023
37
cited
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
IEEE Electron Device Letters · 2022
31
cited
Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
Applied Physics Letters · 2023
30
cited
In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
Advanced Electronic Materials · 2021
27
cited
Delta-doped β-Ga2O3 films with narrow FWHM grown by metalorganic vapor-phase epitaxy
2020
23
cited
Design of a β-Ga2O3 Schottky Barrier Diode With p-Type III-Nitride Guard Ring for Enhanced Breakdown
IEEE Transactions on Electron Devices · 2020
23
cited
Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers
Applied Physics Letters · 2024
22
cited
200 cm2/Vs electron mobility and controlled low 1015 cm−3 Si doping in (010) β -Ga2O3 epitaxial drift layers
Applied Physics Letters · 2024
17
cited
Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga2O3 and β-(AlxGa1−x)2O3 Films
IEEE Electron Device Letters · 2022
17
cited
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Saurav Roy | Researcher Profile | Sotabase | Sotabase