Sotabase

Career

· Program Manager, UC Berkeley Vive Center for Enhanced Reality (Current)2019–
· Administrative Manager, UC Berkeley College of Engineering - Swarm Lab2016–2018
· Relationship Banker, JPMorgan Chase & Co.2013–2016
· Contractor, Novavia Solutions2012–2012
· Business Administration Intern, Pristine Motors2012–2012

Publications (28)

Amplified spontaneous emission from ZnO in n-ZnO/ZnO nanodots–SiO2 composite/p-AlGaN heterojunction light-emitting diodes
Nanotechnology · 2009
41
cited
White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias
IEEE Transactions on Electron Devices · 2011
37
cited
Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias
IEEE Photonics Technology Letters · 2008
36
cited
UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition
IEEE Journal of Quantum Electronics · 2010
34
cited
Current Spreading and Blocking Designs for Improving Light Output Power from the Vertical-Structured GaN-Based Light-Emitting Diodes
IEEE Photonics Technology Letters · 2008
28
cited
Enhanced Performance of Vertical GaN-Based Light-Emitting Diodes with a Current-Blocking Layer and Electroplated Nickel Substrate
2009
18
cited
A Sn-based metal substrate technology for the fabrication of vertical-structured GaN-based light-emitting diodes
2008
15
cited
High Electrostatic Discharge Protection Using Multiple Si:N/GaN and Si:N/Si:GaN Layers in GaN-Based Light Emitting Diodes
2008
13
cited
Structure and Ultraviolet Electroluminescence of $n \hbox{-ZnO/SiO}_{2}\hbox{-ZnO}$ Nanocomposite/$p$ -GaN Heterostructure Light-Emitting Diodes
IEEE Transactions on Electron Devices · 2010
11
cited
Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD
2005
10
cited
Poly- and single-crystalline h-GaN grown on SiCN/Si(100) and SiCN/Si(111) substrates by MOCVD
2006
10
cited
AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
2007
7
cited
Effects of thermal annealing on In-induced metastable defects in InGaN films
2007
7
cited
InGaN ∕ GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers
2008
7
cited
Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl2 Inductively Coupled Plasma Following Laser Lift-Off
2007
6
cited
AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers
2007
4
cited
Output Power Enhancement of GaN-Based Light-Emitting Diodes Using Circular-Gear Structure
2011
1
cited
A Fast Sapphire Substrate Surface Roughening Technology using CO 2 Laser for Enhancing Light Extraction of GaN-Based Flip-Chip Light-Emitting Diodes
2008
A Novel Sn-based Metal Substrate Technology for the Fabrication of Vertical-Structure GaN-Based High Power Light-Emitting Diodes
2007
Development of low dislocation density GaN for 380nm LEDs
2005
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Huo Chao Kuan | Researcher Profile | Sotabase | Sotabase