Anant Agarwal | Researcher Profile | Sotabase

Career

· Chief Open Education Officer, edX/MIT2026–

· Director of CSAIL (MIT's Computer Science and Artificial Intelligence Laboratory), MIT CSAIL2026–

· Professor of Electrical Engineering and Computer Science, MIT CSAIL2026–

· Chief Open Education Officer / Chief Academic Officer, edX / 2U2024–

· Director, MIT CSAIL (Computer Science and Artificial Intelligence Laboratory)2022–

· Founder, edX2012–

· Founder and Chief Open Education Officer, edX2012–

· Founder and President, edX2012–

· Co-founder and CTO, Tilera Corporation2005–

· Chief Open Education Officer, 2U/edX

· President of edX and Professor in EECS, MIT

· Professor of Electrical Engineering and Computer Science, MIT

· Co-founder, Virtual Machine Works

Publications (381)

Status and prospects for SiC power MOSFETs

2002

478

cited

SiC power-switching devices-the second electronics revolution?

Proceedings of the IEEE · 2002

358

cited

Advances in silicon carbide processing and applications

2004

328

cited

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

IEEE Electron Device Letters · 2007

247

cited

Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy

1994

208

cited

Interface trap profile near the band edges at the 4H-SiC/SiO2 interface

2000

163

cited

Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

2007 IEEE Industry Applications Annual Meeting · 2007

159

cited

1800 V NPN bipolar junction transistors in 4H-SiC

IEEE Electron Device Letters · 2001

157

cited

Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC

2000

149

cited

GaN grown on hydrogen plasma cleaned 6H‐SiC substrates

1993

143

cited

Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning

1993

123

cited

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

IEEE Electron Device Letters · 2004

117

cited

1.1 kV 4H-SiC power UMOSFETs

IEEE Electron Device Letters · 1997

115

cited

Inversion layer carrier concentration and mobility in 4H–SiC metal-oxide-semiconductor field-effect transistors

2010

113

cited

10 kV, 5A 4H-SiC Power DMOSFET

2006 IEEE International Symposium on Power Semiconductor Devices and IC's · 2006

102

cited

Recent progress in SiC DMOSFETs and JBS diodes at Cree

2008 34th Annual Conference of IEEE Industrial Electronics · 2008

cited

Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

2013 IEEE Energy Conversion Congress and Exposition · 2013

cited

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

IEEE Transactions on Nuclear Science · 2006

cited

Assessing the Impact of SiC MOSFETs on Converter Interfaces for Distributed Energy Resources

IEEE transactions on power electronics · 2009

cited

Comparison of Static and Switching Characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT

IEEE transactions on industry applications · 2006

cited

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